The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2006
Filed:
Jan. 13, 2004
Yoshinobu Kimura, Yokohama, JP;
Masakiyo Matsumura, Yokohama, JP;
Yoshitaka Yamamoto, Yokohama, JP;
Mikihiko Nishitani, Yokohama, JP;
Masato Hiramatsu, Yokohama, JP;
Masayuki Jyumonji, Yokohama, JP;
Fumiki Nakano, Yokohama, JP;
Yoshinobu Kimura, Yokohama, JP;
Masakiyo Matsumura, Yokohama, JP;
Yoshitaka Yamamoto, Yokohama, JP;
Mikihiko Nishitani, Yokohama, JP;
Masato Hiramatsu, Yokohama, JP;
Masayuki Jyumonji, Yokohama, JP;
Fumiki Nakano, Yokohama, JP;
Advanced LCD Technologies Development Center Co., Ltd., Yokohama, JP;
Abstract
A method of manufacturing a thin-film semiconductor device substrate includes a step of forming a non-single crystalline semiconductor thin film on a base layer, and an annealing step of irradiating the non-single crystalline semiconductor thin film with an energy beam to enhance crystallinity of a non-single crystalline semiconductor constituting the non-single crystalline semiconductor thin film. The annealing step includes simultaneously irradiating the non-single crystalline semiconductor thin film with a plurality of energy beams to form a plurality of unit regions each including at least one irradiated region irradiated with the energy beam and at least one non-irradiated region that is not irradiated with the energy beam.