The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2006
Filed:
Sep. 30, 2003
Mario Pita, Winter Springs, FL (US);
Milton Beachy, Kissimmee, FL (US);
Gerald W. Gibson, Jr., Danbury, CT (US);
Mario Pita, Winter Springs, FL (US);
Milton Beachy, Kissimmee, FL (US);
Gerald W. Gibson, Jr., Danbury, CT (US);
Agere Systems Inc., Allentown, PA (US);
Abstract
A method for forming a trench in a semiconductor silicon substrate. An anti-reflective coating layer and a photoresist layer are formed over the substrate and patterned in accordance with a location for the trench. During the trench etch into the silicon substrate, the etch environment is monitored to detect the material of the anti-reflective coating layer. The etch process is controlled in response to detecting the removal of this material and the known etch rate differential between the anti-reflective coating material layer and the silicon substrate.