The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2006
Filed:
May. 23, 2003
Applicants:
April Gurba, Plano, TX (US);
Husam Alshareef, Murphy, TX (US);
Hiroaki Niimi, Tokyo, JP;
Inventors:
Assignee:
Texas Instruments Corporation, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/31 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention provides, in one embodiment, a method method of monitoring a process for forming a nitridated oxide gate dielectric. A nitrided oxide dielectric layer is formed on a test substrate (). The nitrided oxide dielectric layer is exposed to an etch process (). A change in a property of the nitrided oxide dielectric layer is measured as a function of the etch process (). Other embodiments advantageously incorporate the method into methods for making semiconductor devices and integrated circuits.