The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2006
Filed:
Aug. 29, 2003
Chih-chiang Chen, Ilan, TW;
Ching-sang Chuang, Hsinchu, TW;
Jiun-jye Chang, Kaohsiung, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A method of forming a top gate thin film transistor (TFT). By performing photolithography using a first reticle, a photoresist layer having a thick photoresist layer portion and a thin photoresist layer portion is formed on a silicon layer in an active area. Thus, a channel layer and source/drain regions in a silicon island are defined by the same patterning process. In addition, a gate and an LDD region in the silicon island are defined by photolithography using a second reticle and a backside exposure process. Accordingly, the top gate TFT fabrication process of the present invention requires only two reticles, and thereby reduces costs.