The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2006
Filed:
Oct. 31, 2003
Applicant:
Jin K. Kim, St. Louis Park, MN (US);
Inventor:
Jin K. Kim, St. Louis Park, MN (US);
Assignee:
Finisar Corporation, Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 3/04 (2006.01); H01S 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A vertical cavity surface emitting laser (VCSEL) includes a substrate; a first mirror stack over the substrate; an active region having a plurality of quantum wells over the first mirror stack; a tunnel junction over the active region, a p-layer of the tunnel junction including GaPSb or AlGaPSb; and a second mirror stack over the tunnel junction. The p-layer including GaPSb or AlGaPSb can be used to form a tunnel junction with an n-doped layer of InP or AlInAs, or with a lower bandgap material such as InGaAs, AlInGaAs or InGaAsP. Such tunnel junctions are especially useful for a long wavelength VCSEL.