The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2006
Filed:
Jul. 12, 2004
Masayuki Sugiura, Yokohama, JP;
Makoto Shibamiya, Tokyo, JP;
Yasuhiko Kuriyama, Yokohama, JP;
Toru Sugiyama, Kunitachi, JP;
Yoshikazu Tanabe, Kawasaki, JP;
Masayuki Sugiura, Yokohama, JP;
Makoto Shibamiya, Tokyo, JP;
Yasuhiko Kuriyama, Yokohama, JP;
Toru Sugiyama, Kunitachi, JP;
Yoshikazu Tanabe, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A high-frequency amplification device includes a high-frequency amplifier including input and output sections, a first capacitor including first and second electrodes, and a first insulation film interposed therebetween. The first electrode is connected to the output section via a first inductor, and the second electrode is grounded. The amplification device further comprises a second capacitor including third and fourth electrodes and a second insulation film interposed therebetween. The third electrode is formed of a material substantially identical to that of the first electrode, and the fourth electrode is formed of a material substantially identical to that of the second electrode. The second insulation film is formed of a material substantially identical to that of the first insulation film and has a thickness substantially identical to that of the first insulation film.