Semiconductor device

Abstract

The semiconductor device comprises logic blocksforming a logic circuit, and interconnection regions. A gate interconnectionincluding the gate electrode of a load transistor Land the gate electrode of a driver transistor D, and the source/drain diffused layerof a load transistor Lare connected to each other by a conductor plug. A gate interconnectionincluding the gate electrode of a load transistor Land the gate electrode of a driver transistor D, and the source/drain diffused layerof the load transistor Lare connected to each other by a conductor plug. The source/drain diffused layerof a transfer transistor Tand the source/drain diffused layerof the first driver transistor Dare made common, and the source/drain diffused layerof the transfer transistor Tand the source/drain diffused layerof the driver transistor Dare made common. Accordingly, the area for the memory cells to be formed in can be made very small. The memory cells having such layout are used as the memory cells of the logic blocks and the switch matrices, whereby the areas for the logic blocks to be formed in and the switch matrices to be formed in can be made small. Thus, it is possible to contribute to down-sing, high integration and large capacity, etc. of semiconductor devices.