The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2006
Filed:
Feb. 04, 2004
Harald Böttner, Freiburg, DE;
Axel Schubert, München, DE;
Joachim Nurnus, Neuenburg-Zienken, DE;
Martin Jagle, Sexau, DE;
Harald Böttner, Freiburg, DE;
Axel Schubert, München, DE;
Joachim Nurnus, Neuenburg-Zienken, DE;
Martin Jagle, Sexau, DE;
Infineon Technologies AG, Munich, DE;
Fraunhofer - Gesellschaft zur Forde - rung der angewandten Forschung e. V., Munich, unknown;
Abstract
A microelectromechanical device and a method for producing it having at least one layer on a substrate, in particular a thermoelectric layer on a substrate, the thermal expansion coefficient of the at least one layer and the thermal expansion coefficient of the substrate differing greatly. The at least one layer is coupled to at least one stress reduction means for the targeted reduction of lateral mechanical stresses present in the layer. This achieves a stress-free layer or enables stress-free growth.