The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2006
Filed:
Dec. 26, 2001
Akihide Shibata, Nara, JP;
Hiroshi Iwata, Ikoma-gun, JP;
Seizo Kakimoto, Shiki-gun, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
There is provided a semiconductor device including DTMOS and a substrate variable-bias transistor and a portable electronic device both operable with reduced power consumption. N-type deep well regions are formed in one P-type semiconductor substrate. The N-type deep well regions are electrically isolated by the P-type semiconductor substrate. Over the N-type deep well regions, a P-type deep well region and a P-type shallow well region are formed to fabricate an N-type substrate variable-bias transistor. Over the N-type deep well region, an N-type shallow well region is formed to fabricate a P-type substrate variable-bias transistor. Further a P-type DTMOS and an N-type DTMOD are fabricated.