The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 01, 2006

Filed:

Mar. 11, 2002
Applicants:

Junji Yamada, Gunma, JP;

Yutaka Yamada, Gunma, JP;

Junichi Ariyoshi, Mie, JP;

Inventors:

Junji Yamada, Gunma, JP;

Yutaka Yamada, Gunma, JP;

Junichi Ariyoshi, Mie, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/119 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes: a gate electrode on a semiconductor substrate through a gate insulated film; source/drain regions to be adjacent to said gate electrode; and an Al wiring through an interlayer insulating film covering said gate electrode, wherein impurity ions are implanted into a surface of said semiconductor substrate using as a mask said Al wiring, and a protection film is formed on the Al wiring so that the Al wiring is not exposed when said interlayer insulating film is etched.


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