The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2006
Filed:
Apr. 15, 2005
James D. Warnock, Somers, NY (US);
George E. Smith, Iii, Wappingers Falls, NY (US);
James D. Warnock, Somers, NY (US);
George E. Smith, III, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A first or primary field effect transistor ('FET') is separated from a body contact thereto by one or more second FETs that are placed electrically in parallel with the first FET. In this way, the body of the first FET can be extended into the region occupied by the second FET to allow contact to be made to the body of the first FET. In one embodiment, the gate conductor of the first FET and a gate conductor of the second FET are integral parts of a unitary conductive pattern. The unitary conductive pattern is made desirably small, and can be made as small as the smallest predetermined linewidth for gate conductors on an integrated circuit which includes the body-contacted FET. In this way, area and parasitic capacitance are kept small.