The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2006
Filed:
May. 15, 2002
Applicants:
Tsutomu Sasaki, Futtsu, JP;
Isao Hamaguchi, Futtsu, JP;
Atsuki Matsumura, Futtsu, JP;
Inventors:
Assignee:
Nippon Steel Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/01 (2006.01); H01L 27/12 (2006.01); H01L 31/0392 (2006.01);
U.S. Cl.
CPC ...
Abstract
There is provided an SOI substrate having an SOI structure with an insulating layer and a surface single crystal silicon layer successively formed on a single crystal wafer, the SOI substrate having no pit generation in the SOI layer, being producible at low cost and at high productivity and having excellent gettering capacity, wherein the SOI substrate contains nitrogen and carbon with a nitrogen content of no greater than 1×10atoms/cmand a carbon content of no greater than 1×10atoms/cm.