The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2006
Filed:
Mar. 19, 2001
Dmitri Zalmanovich Garbuzov, Princeton, NJ (US);
Raymond J. Menna, Newtown, PA (US);
Dmitri Zalmanovich Garbuzov, Princeton, NJ (US);
Raymond J. Menna, Newtown, PA (US);
Trumpf Photonics, Inc., Cranbury, NJ (US);
Abstract
A method for improving the efficiency for an optoelectronic device, such as semiconductor lasers, Superluminescence Light Emitting Diodes (SLDs), Gain Chips, optical amplifiers is disclosed, see FIG.B. In accordance with the principles of the invention, at least one blocking layer () is interposed at the interface between materials composing the device. The at least one blocking layers creates a barrier that prevents the leakage of electrons from a device active region contained in the waveguide region, to a device clad region (). In one aspect of the invention, a blocking layer () is formed at the junction of the semiconductor materials having different types of conductivity. The blocking layer prevents electrons from entering the material of a different polarity. In another aspect of the invention, a low-doped or undoped region () is positioned adjacent to the blocking layer () to decrease optical losses.