The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2006
Filed:
Oct. 29, 2002
Applicants:
Kohji Kitamura, Shigan, JP;
Toshio Sunaga, Ohtsu, JP;
Hisatada Miyatake, Ohtsu, JP;
Inventors:
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/88 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
Abstract
Provided is an MRAM memory cell structure capable of preventing generation of parasitic transistors. Diodes are adopted as switching elements of an MRAM memory cell. An n-type semiconductor layer and a p-type semiconductor layer, which collectively constitute a diode, are formed on a surface semiconductor layer of an SOI substrate. The n-type semiconductor layer and the p-type semiconductor layer are disposed in a lateral direction and isolated by an isolation region, whereby the diode is isolated electrically from other elements and from the substrate.