The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2006
Filed:
May. 07, 2004
Volodymyr K. Malyutenko, Kiev, UA;
James R. Kircher, Mendon, NY (US);
Robert L. Murrer, Jr., Sewickley, PA (US);
Donald R. Snyder, Iii, Crestview, FL (US);
Oleg Y. Malyutenko, Kiev, UA;
Vyacheslav V. Bogatyrenko, Kiev, UA;
Volodymyr K. Malyutenko, Kiev, UA;
James R. Kircher, Mendon, NY (US);
Robert L. Murrer, Jr., Sewickley, PA (US);
Donald R. Snyder, III, Crestview, FL (US);
Oleg Y. Malyutenko, Kiev, UA;
Vyacheslav V. Bogatyrenko, Kiev, UA;
The United States of America as represented by the Secretary of the Air Force, Washington, DC (US);
Abstract
A high-speed, high-resolution, broadband dynamic infrared scene generator based on semiconductor transducer conversion of visible spectrum scene images into infrared spectrum images. Wavelength conversion is accomplished in the semiconductor material through absorption of visible spectrum energy by valence electrons in a subsurface layer of the semiconductor material and photogeneration by valence band to conduction band electron transfer occurring within about one diffusion length of the semiconductor material surface. The semiconductor material used, for example Germanium or Silicon provides a band gap energy value that is smaller than the quantum energy level of the optical emission. Temperature of the semiconductor material may be maintained at a selected level above or below that of the infrared scene. Infrared images of higher frequency content than are achievable with conventional thermal heating infrared converters are accomplished. The invention thus includes down conversion of visible generated light in order to develop a semiconductor pixel-less Dynamic Infrared Scene Projector capable of simulating high-speed broadband IR scenery.