The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2006
Filed:
Dec. 21, 2004
Applicant:
Meng-hung Chen, Taoyuan, TW;
Inventor:
Meng-Hung Chen, Taoyuan, TW;
Assignee:
Nanya Technology Corporation, Taoyuan, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract
A bit line contact structure and fabrication method thereof. The method includes providing a substrate having a transistor, with a gate electrode, drain region, and source region, on the substrate, blanketly forming a first dielectric layer on the transistor using spin coating, and patterning the first dielectric layer, forming a via exposing the drain region.