The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2006
Filed:
Dec. 30, 2004
Hyun Soo Shin, Seoul, KR;
Hyun Soo Shin, Seoul, KR;
Dongbu Electronics Co., Ltd., Seoul, KR;
Abstract
A method of fabricating a CMOS (complementary metal oxide semiconductor) transistor includes manufacturing steps, by which adverse transistor characteristics can be prevented from being degraded by high-temperature annealing for hardening a screen oxide layer. The method includes steps of forming a gate on a semiconductor substrate with a gate oxide layer therebetween, forming a screen oxide layer on the substrate and the gate, forming a nitride layer on the screen oxide layer, forming LDD regions in the substrate substantially aligned with the gate, removing the nitride layer, forming a spacer on the screen oxide layer and on at least a portion of a sidewall of the gate, and forming in the substrate source/drain regions extending from the LDD regions respectively in the substrate substantially aligned with the spacer.