The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2006
Filed:
Oct. 26, 2004
Applicants:
Yuan-wei Zheng, Shanghai, CN;
Meng-yu Pan, Shanghai, CN;
Julian Chang, Shanghai, CN;
Inventors:
Assignee:
Grace Semiconductor Manufacturing Corporation, Shanghai, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8236 (2006.01);
U.S. Cl.
CPC ...
Abstract
A data writing method for mask read only memory using different doses of ion implantations to perform the data writing of Mask Read Only Memory. A semiconductor substrate having a plurality of gate structures is provided. The different ion implantations are performed depending on the mask from the user, thereby generating the different voltage output values. The different voltage output values are set as (00), (01), (10), and (11) for the bit output. Therefore, the present invention reduces the area of memory required for a specific data record, and lowers the production cost.