The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2006
Filed:
Feb. 04, 2005
Hsiu-wen Hsu, Hsinchu, TW;
Hsiu-Wen Hsu, Hsinchu, TW;
Episil Technologies Inc., Hsinchu, TW;
Abstract
A method for fabricating a trench power MOSFET, comprising an epitaxial layer and a mask layer formed over a substrate, a trench formed in the epitaxial layer and the mask layer, a gate oxide layer formed on the trench, then the mask layer removed, a body well region formed in the epitaxial layer beside the trench, a source region formed in and adjacent to the body well region, and a spacer formed on the sidewalls of the exposed gate layer exposing the source region partially. Masking by spacer, an opening exposing the body well is formed by partially removing the source region and the gate layer. A body region is formed in the body well region under the opening. A silicide layer is formed on the surfaces of the gate layer and the opening.