The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2006
Filed:
Oct. 18, 2004
Young Bok Lee, Kyungki-Do, KR;
Young Bok Lee, Kyungki-Do, KR;
Hynix Semiconductor Inc., Kyungki-Do, KR;
Abstract
The present invention relates to a method for manufacturing a flash memory device and a flash memory device manufactured by the same. In the present invention, an annealing process of a tunnel insulating film is performed at a relatively low temperature to optimize the threshold voltage of a NHVN transistor. Furthermore, in case of portions not compensated through the annealing process of the tunnel insulating film, the quality of the tunnel insulating film is compensated through a subsequent liner oxide film deposition process and a HDP oxide film annealing process. Therefore, the present invention can improve reliability of the tunnel insulating film and thus provide a flash memory device having good properties.