The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2006
Filed:
Dec. 11, 2003
Kenichi Furuta, Tokyo, JP;
Takahiro Imayoshi, Tokyo, JP;
Kenichi Furuta, Tokyo, JP;
Takahiro Imayoshi, Tokyo, JP;
Oki Electric Industry Co., Ltd., Tokyo, JP;
Abstract
Resist patterns (Rand R) are formed such that an opening between both the films is aligned to the position, where the source electrode () is formed, while the region on the N-layer (), where the drain electrode () is formed afterwards, is covered by the resist film (R). After ohmic electrode material is applied from a direction perpendicular to a semiconductor substrate (), the resist films (Rand R) are removed with the ohmic electrode films (OMand OM). The remaining ohmic electrode film (OM) functions as the source electrode (). After the above-described first lift off process, the second lift off process is performed to form a drain electrode () on the N-layer ().