The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2006
Filed:
Aug. 19, 2004
Masayuki Watanabe, Kanagawa, JP;
Masayuki Watanabe, Kanagawa, JP;
Toshiba Ceramics Co., Ltd., Tokyo, JP;
Abstract
Using a seed crystal comprising a silicon single crystal not including a vacancy excess region, a neck comprising a silicon single crystal not including a vacancy excess region is grown with a diameter contracted smaller than, or equal to that of the contact surface of the silicon seed crystal in contact with a raw material silicon melt, and necking is performed so that the length L of the neck satisfies L≧d·(cot ψ), where d denotes the length of the diameter or the diagonal of the contact surface of the silicon seed crystal in contact with the raw material silicon melt, and ψ denotes the angle formed between the propagation direction of dislocations and the growth direction of the neck, and then the silicon single crystal is grown with the diameter expanded.