The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2006
Filed:
May. 15, 2003
Applicant:
Mao-yi Chang, Taipei, TW;
Inventor:
Mao-Yi Chang, Taipei, TW;
Assignee:
AU Optronics Corp., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 13/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
At least one amorphous silicon island is formed on a substrate first. A first step and a second step laser crystallization processes are thereafter performed in sequence. The amorphous silicon island is irradiated with a laser pulse having a first energy density to re-crystallize an edge portion of the amorphous silicon island into a polysilicon structure. The amorphous silicon island is then irradiated with a laser pulse having a second energy density to re-crystallize a center portion of the amorphous silicon island into a polysilicon structure.