The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2006
Filed:
Jan. 27, 2005
Hirotaka Amakawa, Ibaraki-ken, JP;
Hirotaka Amakawa, Ibaraki-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
An ion implantation simulator that computes an ion density distribution at high speed and with high accuracy based on a beam dispersion phenomenon in an ion implantation process. The ion implantation simulator is provided with the beam dispersion approximate function storage section, which stores a beam dispersion approximate function that is obtained through approximation of ion beam dispersion by using a predetermined function; a beam intensity computing section, which computes an area surface beam intensity that indicates an intensity of the ion beam on a surface of an implanted area by using the beam dispersion approximate function; and an ion density distribution computing section, which computes the density distribution of the ion, which is implanted by the ion beam into the device through the surface of the implanted area, by using the area surface beam intensity.