The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 18, 2006

Filed:

Nov. 13, 2003
Applicants:

Toshifumi Nakatani, Osaka, JP;

Hisashi Adachi, Osaka, JP;

Yukio Hiraoka, Hyogo, JP;

Inventors:

Toshifumi Nakatani, Osaka, JP;

Hisashi Adachi, Osaka, JP;

Yukio Hiraoka, Hyogo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04B 1/28 (2006.01); H01L 27/01 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor differential circuit comprising a semiconductor substrate, a first semiconductor device on the semiconductor substrate having a gate electrode for having one of differential signals conveyed thereto and a drain electrode for outputting one of the differential signals controlled by the gate electrode, a second semiconductor device formed on the semiconductor substrate having a gate electrode for having the other of the differential signals conveyed thereto and a drain electrode for outputting the other of the differential signals controlled by the gate electrode, and wherein the drain electrode and drain electrode are placed in the proximity so that, at a predetermined frequency, it is equivalent to the one in which the drain electrode is grounded via a predetermined resistance, and the drain electrode is grounded via the predetermined resistance.


Find Patent Forward Citations

Loading…