The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2006
Filed:
Sep. 02, 2004
Masahiro Kanno, Yokohama, JP;
Masahiro Kanno, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A method for manufacturing a semiconductor device, including obtaining a first dimension difference or ratio which shows a dimension difference or ratio of a latent images of a first and a second focus monitor marks, or a dimension difference or ratio of a first and a second focus monitor marks, calculating a first defocus value based on the first dimension difference or ratio, obtaining second characteristic showing defocus value characteristic for a pressure inside a chamber based on pairs of the pressure and defocus value, measuring the pressure, predicting the defocus value based on the measured pressure and the second characteristic, correcting the relationship between a focus position of an exposure light and a position on the optical axis of the second resist film in accordance with the predicted defocus value, and forming the latent image of the circuit pattern on the second photo resist film.