The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2006
Filed:
Jul. 08, 2003
Hiroshi Okumura, Kanagawa, JP;
Hiroshi Okumura, Kanagawa, JP;
NEC LCD technologies, Ltd., Kanagawa, JP;
Abstract
A method of forming a semiconductor thin-film constitutes an alignment mark in a laser annealing process. A first laser beam is irradiated to a semiconductor thin-film to form a first irradiated region. A second laser beam, which is coaxial with the first laser beam, is irradiated to the thin-film in such a way as not to overlap with the first irradiated region, thereby forming a second irradiated region and a non-irradiated region. An alignment mark is formed by using an optical constant difference between the second irradiated region and the non-irradiated region. The second laser beam may be irradiated to the thin-film in such a way as to overlap with the first irradiated region, where an alignment mark is formed by using an optical constant difference between the first and second irradiated regions or between the second irradiated region and the non-irradiated region. Preferably, the thin-film is made of a-Si or poly-Si.