The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2006
Filed:
Apr. 15, 2004
Takeshi Endou, Obu, JP;
Yuuichi Takeuchi, Obu, JP;
Takeshi Endou, Obu, JP;
Yuuichi Takeuchi, Obu, JP;
Denso Corporation, Kariya, JP;
Abstract
An insulating film () is formed on a semiconductor substrate () formed of silicon carbide. A contact hole () is formed in the insulating film () to expose a part of the upper surface of the semiconductor substrate (). Then, nickel (Ni) (') is formed above the semiconductor substrate (). Subsequently, the semiconductor substrate () is subjected to a heat treatment, whereby the contact portion of nickel (′) chemically bonds with the semiconductor substrate () to become an alloy layer () of silicon carbide and nickel. Nickel (′) on the insulating film () is selectively removed by etching liquid for dissolving the nickel.