The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2006
Filed:
Apr. 14, 2005
Kinya Ashikaga, Tokyo, JP;
Kinya Ashikaga, Tokyo, JP;
Oki Electric Industry Co., Ltd., Tokyo, JP;
Abstract
A method of producing a ferroelectric capacitor includes forming a first insulating layer on a semiconductor substrate with an MOSFET. After a first interlayer insulating layer is formed, a first conductive layer, a ferroelectric layer, and a second conductive layer are laminated on the first interlayer insulating layer to form a ferroelectric capacitor. After a first opening is formed in a ferroelectric thin layer, first restoration annealing is performed relative to a first member formed of a first interlayer insulating layer and the ferroelectric capacitor. A second interlayer insulating layer is formed on the first interlayer insulating layer, and a second opening is formed in the second interlayer insulating layer through etching. Then, second restoration annealing is performed relative to a second member formed of the first member and the second interlayer insulating layer with the second opening under in an order of nitrogen, oxygen, and nitrogen, respectively.