The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2006
Filed:
Dec. 16, 2002
Alan J. Heeger, Santa Barbara, CA (US);
Daniel Moses, Santa Barbara, CA (US);
Guangming Wang, Goleta, CA (US);
James S. Swensen, Goleta, CA (US);
Alan J. Heeger, Santa Barbara, CA (US);
Daniel Moses, Santa Barbara, CA (US);
Guangming Wang, Goleta, CA (US);
James S. Swensen, Goleta, CA (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
Organic FETs are produced having high mobilities in the accumulation mode and in the depletion mode. Significantly higher mobility is obtained from FETs in which RR-P3HT film is applied by dip-coating to a thickness of only about 20 Å to 1 μm. It was found that the structural order of the semiconducting polymer at the interface between the semiconducting polymer and the SiOgate-insulator is important for achieving high carrier mobility. Heat-treatment under an inert atmosphere also was found to increase the on/off ratio of the FET.