The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 18, 2006

Filed:

May. 30, 2003
Applicants:

Peter Berasi, Hopewell Junction, NY (US);

Michael Jerome, Kingston, NY (US);

Doris Pulaski, Holmes, NY (US);

Robert Rippstein, Hopewell Junction, NY (US);

Inventors:

Peter Berasi, Hopewell Junction, NY (US);

Michael Jerome, Kingston, NY (US);

Doris Pulaski, Holmes, NY (US);

Robert Rippstein, Hopewell Junction, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23F 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of making, and the resultant mask, comprises developing resist layers over surfaces of a masking layer to transfer significantly reduced sized openings within glass masters attached to the surfaces of the masking layer into the resist layers. These significantly reduced sized openings within the resist layers are then transferred into the masking layer within a first etch bath by simultaneously monitoring and controlling both etchant activity and concentration of a byproduct within the etch bath formed between the masking material and the etchant. The openings may be etched to completion within the first etch bath, or alternatively, the openings may be etched to a pre-finished image size. Wherein the openings are etched to a pre-finished image size, the masking layer is immersed into a second etch bath for further micro-etching of these openings to a final desired image size.


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