The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2006
Filed:
Sep. 29, 2004
Peter R. Holloway, Groveland, MA (US);
Jun Wan, Wilmington, MA (US);
Peter R. Holloway, Groveland, MA (US);
Jun Wan, Wilmington, MA (US);
National Semiconductor Corporation, Santa Clara, CA (US);
Abstract
A super-PTAT current source receives a PTAT reference voltage as input. The PTAT reference voltage is combined with the gate-to-source voltage difference of two unequal-area input transistors and the combined voltage is imposed on a high negative temperature coefficient resistor to produce an output current that is super-PTAT. A current source supplies a bias current to the super-PTAT current source whereby excess current provided by the current source is consumed by closed loop adjustments. The super-PTAT current source generates a super-PTAT current having a constant slope, excellent stability and very good linearity. In one embodiment, the super-PTAT output current is mixed with a sub-PTAT current in a preselected ratio to generate output currents having exactly the desired temperature coefficient.