The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2006
Filed:
May. 28, 2004
Francisco A. Leon, Palo Alto, CA (US);
Lawrence C. West, San Jose, CA (US);
Yuichi Wada, Tomisato, JP;
Gregory L. Wojcik, Ben Lomond, CA (US);
Stephen Moffatt, Jersey, GB;
Francisco A. Leon, Palo Alto, CA (US);
Lawrence C. West, San Jose, CA (US);
Yuichi Wada, Tomisato, JP;
Gregory L. Wojcik, Ben Lomond, CA (US);
Stephen Moffatt, Jersey, GB;
Applied Material, Inc., Santa Clara, CA (US);
Abstract
A method of fabricating a detector that involves: forming a trench in a substrate, the substrate having an upper surface; forming a first doped semiconductor layer on the substrate and in the trench; forming a second semiconductor layer on the first doped semiconductor layer and extending into the trench, the second semiconductor layer having a conductivity that is less than the conductivity of the first doped semiconductor layer; forming a third doped semiconductor layer on the second semiconductor layer and extending into the trench; removing portions of the first, second and third layers that are above a plane defined by the surface of the substrate to produce an upper, substantially planar surface and expose an upper end of the first doped semiconductor layer in the trench; forming a first electrical contact to the first semiconductor doped layer; and forming a second electrical contact to the third semiconductor doped layer.