Horizontal mos transistor

Abstract

This invention provides a horizontal MOS transistor capable of improving current drivability and reducing ON resistance by optimizing the gate wiring structure and the disposition structure of source/drain layers. First gate wirings are disposed in the X direction at a pitch Yin the Y direction and second gate wiringsare disposed in the Y direction with two pieces as a pair such that they meander at a pitch Xin the X direction. The meandering of the second gate wiringis formed so as to sandwich the bent portionssubstantially in the center of the pitch Y. A bottle-like shape diffusion layer region in which the wide-width region and narrow-width region are combined is sectioned by adjacent first and second wirings. A contactfor connecting the diffusion layer region to the wiring layeris disposed in the wide-width region and wiring layersare disposed such that two rows run in parallel in the X direction. A diffusion layer region is a different electrode region from diffusion layer regions adjacent on four sides thereby forming a MOS transistor. Consequently, a horizontal MOS transistor excellent in current drivability for each unit region and having a slight ON resistance is constructed.