The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2006
Filed:
Oct. 19, 2004
Nobuaki Tsuji, Hamamatsu, JP;
Masao Noro, Hamamatsu, JP;
Terumitsu Maeno, Iwata, JP;
Seiji Hirade, Hamamatsu, JP;
Nobuaki Tsuji, Hamamatsu, JP;
Masao Noro, Hamamatsu, JP;
Terumitsu Maeno, Iwata, JP;
Seiji Hirade, Hamamatsu, JP;
Yamaha Corporation, Hamamatsu, JP;
Abstract
A lateral PNP transistor PB and a lateral NPN transistor NB are serially connected between an input terminal and a reference potential (ground potential). In the transistor PB, a diode Dis formed. In the transistor NB, a diode Dis formed. When an ESD of +2000 V is input, the transistor NB turns on, whereas when an ESD of −2000 V is input, the transistor PB turns on. The level of a positive signal capable of being input is limited by the inverse breakdown voltage (e.g., 18 to 50 V) of the diode D, whereas the level of a negative signal capable of being input is limited by the inverse breakdown voltage (e.g., 13 to 15 V) of the diode D.