The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2006
Filed:
May. 24, 2005
Applicant:
Yoshihiko Hanamaki, Tokyo, JP;
Inventor:
Yoshihiko Hanamaki, Tokyo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
In an optical semiconductor device including, at least, an n-type semiconductor layer having n-type conductivity, an active layer, a p-type semiconductor layer having p-type conductivity, current blocking layers doped with Fe are located on opposite sides of the p-type semiconductor layer. Fe and Be are simultaneously supplied as dopants when forming the p-type semiconductor layer. In this event, the flow rates of source materials supplying the respective elements are adjusted so that the p-type semiconductor layer has a hole concentration of about 1.0×10/cmand an Fe concentration of about 2×10to 8×10/cm.