The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2006
Filed:
Sep. 30, 2004
Jian Chen, Austin, TX (US);
Stanley M. Filipiak, Pflugerville, TX (US);
Yongjoo Jeon, Austin, TX (US);
Tab A. Stephens, Austin, TX (US);
Jian Chen, Austin, TX (US);
Stanley M. Filipiak, Pflugerville, TX (US);
Yongjoo Jeon, Austin, TX (US);
Tab A. Stephens, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
An etch stop layer located over a plasma enhanced nitride (PEN) layer. Interlayer dielectric material is then formed over the etched stop layer. The etch stop layer is used as an etch stop for etching openings in the interlayer dielectric. In some embodiments, integrated circuits built with the PEN layer may include transistors with improved drive current at a given leakage current. Also, integrated circuits with the PEN layer may exhibit reduced parasitic capacitance.