The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2006
Filed:
Feb. 13, 2002
Hiroshi Iwata, Nara, JP;
Akihide Shibata, Nara, JP;
Nobutoshi Arai, Nara, JP;
Takayuki Ogura, Nara, JP;
Kouichirou Adachi, Tenri, JP;
Seizo Kakimoto, Nara, JP;
Yukio Yasuda, Aichi-gun, Aichi 480-1156, JP;
Shigeaki Zaima, Kasugai-shi, Aichi 487-0017, JP;
Akira Sakai, Nagoya-shi, Aichi 458-0015, JP;
Hiroshi Iwata, Nara, JP;
Akihide Shibata, Nara, JP;
Nobutoshi Arai, Nara, JP;
Takayuki Ogura, Nara, JP;
Kouichirou Adachi, Tenri, JP;
Seizo Kakimoto, Nara, JP;
Yukio Yasuda, Aichi-gun, Aichi 480-1156, JP;
Shigeaki Zaima, Kasugai-shi, Aichi 487-0017, JP;
Akira Sakai, Nagoya-shi, Aichi 458-0015, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Other;
Abstract
A memory film operable at a low voltage and a method of manufacturing the memory film; the method, comprising the steps of forming a first insulation film () on a semiconductor substrate () forming a first electrode, forming a first conductor film () on the first insulation film (), forming a second insulation film (B) on the surface of the first conductor film (), forming a third insulation film containing conductor particulates () on the second insulation film (B), and forming a second conductor film forming a second electrode on the third insulation film.