The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2006
Filed:
Feb. 27, 2004
Shahid Butt, Ossining, NY (US);
Gerhard Kunkel, Radebeul, DE;
Shahid Butt, Ossining, NY (US);
Gerhard Kunkel, Radebeul, DE;
Infineon Technologies AG, Munich, DE;
Abstract
The relative surface area sizes of portions having distinct phase-shift and transmission of light of a pattern on a phase-shift mask substantially obey the condition that the product of surface area and transmission of the electrical field strength is the same for all of the portions. Then, frequency doubling occurs due to vanishing zero order diffraction orders and in the case of high-transition attenuated phase-shift masks a large first order diffraction amplitude reveals an even an improved as compared with conventional phase-shift masks. Two-dimensional matrix-like structures particularly on attenuated or halftone phase-shift masks can be arranged to image high-density patterns on a semiconductor wafer. The duty cycles of pattern matrices can be chosen being different from one in two orthogonal directions nevertheless leading to frequency doubling.