The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2006
Filed:
Jul. 23, 2003
Michio Ohkubo, Tokyo, JP;
Yoshikazu Ikegami, Tokyo, JP;
Takeshi Namegaya, Tokyo, JP;
Akihiko Kasukawa, Tokyo, JP;
Junji Yoshida, Tokyo, JP;
Michio Ohkubo, Tokyo, JP;
Yoshikazu Ikegami, Tokyo, JP;
Takeshi Namegaya, Tokyo, JP;
Akihiko Kasukawa, Tokyo, JP;
Junji Yoshida, Tokyo, JP;
The Furukawa Electric Co., Ltd., Tokyo, JP;
Abstract
A GaAs based semiconductor laser having a combination of cladding layers including a ridge structure part, and a remaining part which overlays the active layers of the laser, and an etch stop layer sandwiched between the ridge structure part and the remaining part. The remaining part preferably overlies the entire surface of laser active layers and has a thickness 'D' which satisfies 1.1×W>D≧0.5×W wherein W is the width of a spot size having a strength of 1/eas measured at the laser front facet in a direction perpendicular to the active layers, wherein 'e' is the base of the natural logarithm. The semiconductor laser solves the kink phenomenon to obtain an excellent linear relationship between the optical output power and the injected current.