The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2006
Filed:
Sep. 16, 2003
Minh Van Ngo, Freemont, CA (US);
Dawn Hopper, San Jose, CA (US);
Minh Van Ngo, Freemont, CA (US);
Dawn Hopper, San Jose, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
Semiconductor devices comprising interconnect with improved adhesion of barrier layers to dielectric layers are formed by laser thermal annealing exposed surfaces of a dielectric layer in an atmosphere of NHand N, and subsequently depositing Ta to form a composite barrier layer. Embodiments include forming a dual damascene opening in an interlayer dielectric comprising F-containing silicon oxide, such as F-containing silicon oxide derived from F-TEOS, laser thermal annealing the exposed silicon oxide surface in NHand N, depositing Ta and then filling the opening with Cu. Laser thermal annealing in NHand Ndepletes the exposed silicon oxide surface of F while forming an N-rich surface region. Deposited Ta reacts with the Nin the N-rich surface region to form a composite barrier layer comprising a graded layer of tantalum nitride and a layer of α-Ta thereon.