The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2006
Filed:
Apr. 30, 2004
Makoto Higashikawa, Nara, JP;
Makoto Higashikawa, Nara, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
The present invention provides a method of forming a semiconductor device that has a plurality of pin junctions comprising silicon films formed on a substrate by using a radio-frequency plasma CVD method, including: forming a first semiconductor layer; covering a surface of the first semiconductor layer with a member containing water with a content of 0.01 to 0.5 wt % so as to contact each other; removing the member; and forming a second semiconductor layer on the first semiconductor layer. According to the present invention, it is possible to efficiently form a semiconductor device having a multi-layer structure where a number of silicon thin films are laminated, to form a semiconductor device having less variation in characteristics among lots and having more excellent uniformity and characteristics, and to provide a semiconductor device excelling in adhesion and environmental resistance.