The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2006
Filed:
Apr. 02, 2004
Ralf Schneider, München, DE;
Joerg Vollrath, Olching, DE;
Marcin Gnat, München, DE;
Infineon Technologies AG, Munich, DE (US);
Abstract
An integrated memory contains a memory cell array, which has word lines and bit lines, and a read/write amplifier, which is connected to the bit lines for the assessing and amplifying data signals. A voltage generator circuit generates a voltage supply for application to the read/write amplifier. A potential difference is applied to the read/write amplifier using different supply potentials. The voltage generator circuit increases the potential difference applied to the read/write amplifier for a limited period of time during an assessment and amplification operation of the read/write amplifier. Charge-dependent control is implemented in the voltage generator circuit. An assessment and amplification operation can be carried out at a comparatively high switching speed and a low power consumption is possible.