The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2006
Filed:
Nov. 19, 2004
Applicants:
Katsuyuki Torii, Saitama, JP;
Ryoji Takahashi, Saitama, JP;
Inventors:
Katsuyuki Torii, Saitama, JP;
Ryoji Takahashi, Saitama, JP;
Assignee:
Sanken Electric Co., Ltd., , JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/082 (2006.01);
U.S. Cl.
CPC ...
Abstract
An IGBT has an N-type buffer region between a P-type collector region and a P-type base region. The buffer region includes arsenic as a N-type impurity. The buffer region is formed to have a relatively high impurity concentration of equal to or greater than 5×1017 cm-3 and a relatively small thickness of 2 to 10 μm.
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Torii, Katsuyuki. (2006). Insulated gate bipolar transistor having a reduced tail current and method of fabricating the same (U.S. Patent No. 7067900). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7067900
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