The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2006

Filed:

Jan. 07, 2004
Applicants:

Tsu-jae King, Fremont, CA (US);

David K. Y. Liu, Fremont, CA (US);

Inventors:

Tsu-Jae King, Fremont, CA (US);

David K. Y. Liu, Fremont, CA (US);

Assignee:

Progressant Technologies, Inc., Mountain View, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
Abstract

A silicon based semiconductor device and method uses charge trapping to alter a density of carriers available in a channel of a field effect transistor (FET) for conduction. The charge trapping mechanism can be controlled by a source-drain bias voltages applied to the FET, so that the device can be turned off through a control mechanism separate from a gate voltage.


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