The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2006
Filed:
Aug. 02, 2005
Applicant:
Ichiro Hase, Kanagawa, JP;
Inventor:
Ichiro Hase, Kanagawa, JP;
Assignee:
Sony Corporation, , JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/73 (2006.01);
U.S. Cl.
CPC ...
Abstract
A heterojunction bipolar transistor (HBT) with improved characteristics is provided. A III–V compound semiconductor having Bi added thereto is used for a base layer of a GaAs-based or InP-based HBT. For example, a GaAs-based HBT is formed by successively stacking a subcollector layer made of n-GaAs, a collector layer made of n-GaAs, a base layer made of p-GaAsBi, an emitter layer made of n-InGaP, a first cap layer made of n-GaAs, and a second cap layer made of n-InGaAs on a substratemade of single crystal GaAs.