The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2006
Filed:
Apr. 16, 2004
Hisao Sato, Naruto, JP;
Naoki Wada, Naruto, JP;
Shiro Sakai, Tokushima, JP;
Masahiro Kimura, Naruto, JP;
Hisao Sato, Naruto, JP;
Naoki Wada, Naruto, JP;
Shiro Sakai, Tokushima, JP;
Masahiro Kimura, Naruto, JP;
Abstract
A light-emitting apparatus employing a GaN-based semiconductor. The light-emitting apparatus comprises an n-type clad layer (); an active layer () including an n-type first barrier layer (), well layers (), and second barrier layers (); a p-type block layer (); and a p-type clad layer (). By setting the band gap energy Egb of the p-type block layer (), the band gap energy Egof the second barrier layers (), the band gap energy Egof the first barrier layer (), and the band gap energy Egc of the n-type and the p-type clad layers such that the relationship Egb>Eg>Eg≧Egc is satisfied; the carriers can be efficiently confined; and the intensity of the light emission can be increased.