The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2006

Filed:

Mar. 17, 2005
Applicants:

Selim Bencuya, Irvine, CA (US);

Richard Mann, Torrance, CA (US);

Hiok-nam Tay, Irvine, CA (US);

Inventors:

Selim Bencuya, Irvine, CA (US);

Richard Mann, Torrance, CA (US);

Hiok-Nam Tay, Irvine, CA (US);

Assignee:

ESS Technology, Inc., Fremont, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H04N 3/14 (2006.01); H04N 5/335 (2006.01);
U.S. Cl.
CPC ...
Abstract

An exemplary CMOS image sensor comprises a reset transistor, a photodiode, reset drain voltage circuitry, and reset gate voltage circuitry. A cathode of the photodiode is connected to a source of the reset transistor, and an anode of the photodiode is connected to ground. The reset drain voltage circuitry is connected to a drain of the reset transistor, and the reset gate voltage circuitry is connected to a gate of the reset transistor. During an exemplary hard reset operation, the reset drain voltage circuitry supplies a first drain voltage to the drain of the reset transistor in accordance with a determined level of light for exposure, which is determined dynamically. According to another exemplary reset operation, a hard reset phase is immediately followed by a soft reset phase.


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