The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2006
Filed:
Aug. 25, 2003
Byung-seop Hong, Ichon-shi, KR;
Jae-geun OH, Ichon-shi, KR;
Byung-Seop Hong, Ichon-shi, KR;
Jae-Geun Oh, Ichon-shi, KR;
Hynix Semiconductor Inc., , KR;
Abstract
A semiconductor device and a method for releasing stress exerted while fabricating the semiconductor device. The method for releasing the stress, includes forming a stack layer deposited on a semiconductor sequentially with a gate oxide layer, a poly-silicon layer, a tungsten layer, and a hard mask; selectively oxidizing, wherein only the poly-silicon layer of the stack layer is oxidized; heat treating for releasing stress exerted during the selective oxidation process; and forming a gate sealing nitride layer on the stack layer heat-treated.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile