The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2006
Filed:
Jul. 12, 2004
Su Ho Kim, Kyoungki-do, KR;
Yun Hyuck Ji, Kyoungki-do, KR;
Su Ho Kim, Kyoungki-do, KR;
Yun Hyuck Ji, Kyoungki-do, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
Disclosed is a method for forming an isolation layer of a semiconductor device. The method includes the steps of providing a semiconductor substrate having a predetermined isolation region, sequentially forming a pad oxide layer and a pad nitride layer exposing the predetermined isolation region on the semiconductor substrate, forming a trench through etching the semiconductor substrate by a predetermined thickness using the pad nitride layer as a mask, forming a wall oxide layer at a side wall of the trench, sequentially forming a nitride layer and an oxide layer on a trench structure including the wall oxide layer, forming an AlOlayer on an entire surface of a resultant structure, planarizing the AlOlayer through polishing the AlOlayer, and forming the isolation layer by removing the pad nitride layer.